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(R)
TS1220-600B
SENSITIVE SCR
FEATURES IT(RMS) = 12A VDRM/VRRM = 600V IGT < 200A HIGH ITSM = 110A (tp = 10ms)
A
A K
G
DESCRIPTION The TS1220-600B is using a high performance TOPGLASS PNPN technology and is intended for applications requiring high surge capability (like power tools, crowbar protection, capacitive discharge ignition...). DPAK (Plastic)
ABSOLUTE RATINGS (limiting values) Symbol VDRM VRRM IT(RMS) IT(AV) ITSM Parameter Repetitive peak off-state voltage RGK = 220 Tj = 125C RMS on-state current (180 conduction angle) Average on-state current (180 conduction angle) Non repetitive surge peak on-state current (Tj initial = 25C ) Tc= 105C Tc= 105C tp = 10 ms tp = 8.3 ms I2t dI/dt Tstg Tj T I2t Value for fusing Critical rate of rise of on-state current dIG /dt = 0.1 A/s. IG = 10 mA Storage junction temperature range Operating junction temperature range Maximum temperature for soldering during 10s tp = 10 ms Value 600 12 8 110 115 40 50 - 40 to + 150 - 40 to + 125 260 A2s A/s C C Unit V A A A
May 1998 - Ed: A3
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TS1220-600B
THERMAL RESISTANCES Symbol Rth(j-c) Rth(j-a) Parameter Junction to case for D.C Junction to ambient (S = 0.5 cm2) Value 1.5 70 Unit C/W C/W
GATE CHARACTERISTICS (maximum values) PG (AV)= 0.2W PGM = 3 W (tp = 20 s) IGM = 1.2 A (tp = 20 s)
ELECTRICAL CHARACTERISTICS Symbol IGT VGT VGD VRG IH VTM IDRM IRRM dV/dt Test Conditions VD=12V RL=140 VD=12V RL=140 RL=33 Tj= 25C Tj= 25C Tj= 25C Tj= 25C IG=5mA RGK = 1k Tj= 25C Tj= 25C Tj= 25C Tj= 125C Tj= 125C Type MAX MAX MAX MIN MAX MAX MAX MAX MIN Value 200 0.8 0.1 8 5 1.6 10 2 5 Unit A V V V mA V A mA V/s
VD=12V(DC) IRG = 10A IT=50mA
ITM= 24A tp= 380s VD= VDRM VR= VRRM RGK = 220 RGK = 220
VD=67%VDRM RGK = 220
ORDERING INFORMATION Add "-TR" suffix for Tape and Reel shipment
TS 12 20 - 600
THYRISTOR SENSITIVE CURRENT SENSITIVITY VOLTAGE
B
PACKAGE B = DPAK
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TS1220-600B
Fig 1: Maximum average power dissipation versus average on-state current. Fig 2: Correlation between maximum average power dissipation and maximum allowable temperatures (Tamb and Tcase). Note: Rth=0C/W is infinite heatsink.
P(W)

14 12 10 8 6 4 2 0
P(W)
14 13 12 11 10 9 8 7 6 5 4 3 2 1 0
Tcase (C)
Rth=0C/W
105 110 115
Rth(j-a)=37C/W Rth(j-a)=80C/W
120 125
180
IT(AV)(A) 0 1 2 3 4 5 6 7 8
0
25
50
9 10 11 12
75 Tamb(C)
100
125
Fig 3-1: Average and D.C. on-state current versus case temperature.
Fig 3-2: Average and D.C. on-state current versus ambient temperature (device mounted on FR4 with recommended pad layout).
IT(AV)(A)
13 12 11 10 9 8 7 6 5 4 3 2 1 0
IT(AV)(A)
D.C.
Tcase(C) 0 25 50 75 100 125
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0
Tamb(C) 0 25 50 75 100 125
Fig 4: Relative variation of thermal impedance junction to case versus pulse duration.
Fig 4-2: Relative variation of thermal impedance junction to ambient versus pulse duration (recomended pad layout).
K=[Zth(j-a)/Rth(j-a)] 1.00
1.0
K=[Zth(j-c)/Rth(j-c)]
0.5
0.10
0.2 tp(s) 0.1 1E-3 1E-2 1E-1 1E+0
0.01 1E-2 1E-1
tp(s)
1E+0 1E+1 1E+2 5E+2
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TS1220-600B
Fig 5: Relative variation of gate trigger current and holding current versus junction temperature.
IGT,IH[Tj]/IGT,IH[Tj=25C] 2.0 1.8 IGT 1.6 1.4 1.2 IH 1.0 0.8 0.6 0.4 0.2 Tj(C) 0.0 -40 -20 0 20 40 60
Fig 6: Relative variation of holding current versus gate-cathode resistance (typical values).
5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5
RGK( )
IH[RGK] / IH [RGK=1k]
Tj=25C
80
100 120 140
0.0 1E+1
1E+2
1E+3
1E+4
Fig 7: Non repetitive surge peak on-state current versus number of cycles.
Fig 8: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and corresponding value of I2t.
ITSM(A),It(As)
120 110 100 90 80 70 60 50 40 30 20 10 0
ITSM(A)
Tj initial=25C F=50Hz
500
ITSM
Tj initial=25C
100
It
Number of cycles 1 10 100 1000
tp(ms) 10 1 2 5 10
Fig 9: On-state characteristics (maximum values).
Fig 10: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35m).
Rth(j-a) (C/W) 100 80 60
ITM(A) 100.0
Tj max.: Vto=0.85V Rt=31m
10.0
Tj=Tj max.
Tj=25C
1.0 VTM(V) 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
40 20 S(Cu) (cm) 0 0 2 4 6 8 10 12 14 16 18 20
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TS1220-600B
PACKAGE MECHANICAL DATA DPAK (Plastic) DIMENSIONS REF. A A1 A2 B B2 C C2 D E G H L2 L4 V2 MARKING FOOT PRINT DIMENSIONS (in millimeters)
6.7
Millimeters 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 0.80 0.60 0 1.00 0.023 8 0 2.40 0.086 1.10 0.035 0.23 0.001 0.90 0.025 5.40 0.204 0.60 0.017 0.60 0.018 6.20 0.236 6.60 0.251 4.60 0.173 10.10 0.368
Inches 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.259 0.181 0.397 0.031 0.039 8
Min. Typ. Max Min. Typ. Max.
TYPE TS1220-600B
6.7
MARKING TS 1220 6
6.7 3 1.6 2.3 2.3 1.6
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 1998 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
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